| PART |
Description |
Maker |
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| KMM5321200C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM5322200C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
| KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5364005BSW |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5328100CK KMM5328100CKG KMM5328000CKG KMM532800 |
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5328004BSW |
8MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53232000CK KMM53232000CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
